F+ center exchange mechanism and magnetocrystalline anisotropy in Ni-doped 3C-SiC

• F + center exchange mechanism has been invoked in order to explain the long range magnetic system. The Curie temperature is found be above 350 K for all doped samples obtained from modified Bloch’s T 3/2 law. dynamic nature of BMPs sizes have studied extensively using Hc vs data. spontaneous spin polarization induced system due strong hybridization between (C) 2p and (Ni) 3d orbital. decrease magneto crystalline anisotropy constant value with increase essentially indicates weakening interaction incomplete quenching orbital angular momentum partial removal degeneracy resulted reduction line width enhancement integrated intensity as rises. Towards development a semiconductor suitable spintronic device applications extreme environments, we explored possibility inducing SiC by doping Nickel. X-ray diffraction Raman Spectroscopy studies confirm incorporation Ni into host lattice. measurements electron resonance indicate presence room ferromagnetic 1, 3, 5% Ni-doped 420 K, 520 540 respectively. Electron study reveals that valence state 2 , which implies creation vacancies at both Silicon (V Si ) Carbon C sites they are tetravalent. change magnetization an dopant concentration consistent variation number free holes. analysis data Law approach saturation shows anisotropic decreases temperature. long-range explained mechanism.